Charge duplicator for charge transfer device

Details Charge duplicator for charge transfer device Charge duplicator for charge transfer device

1989-01-03

1990-04-10

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

36518901, G11C 1300

Patent

active

049166646

ABSTRACT:
A charge transfer device having a first storage gate above a first storage region and a second storage gate above a second storage region. The charge duplicator has a first charge injector having a first passage gate which introduces, below the first storage gate, the reference charge to be duplicated. A second charge injector having a second passage gate is located near the second storage gate. The first storage gate and second storage gate are connected to the two inputs of a voltage comparator, the output of the voltage comparator being connected to the second passage gate. The charge duplicator has a mechanism which initially is used to apply a reference voltage to the two inputs of the voltage comparator, thereby leaving the two inputs and the gates connected to them in a floating state. The voltage comparator outputs a high level or low level, depending on the value of the differential voltage between its inputs. A very steep transition occurs between the two levels, which is as close to zero as possible.

REFERENCES:
"Proceeding of 5th International Conference on Charge--Coupled Devices", Sep. 1979, pp. 156-161.
"Patent Abstracts of Japan", vol. 5, No. 46, (p. 64) (718), Mar. 17, 1981.
"IEEE Journal of Solid--State Circuits", vol. 11, No. 1, Feb. 1976, pp. 197-202.

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