Charge dissipation in electrostatically driven devices

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

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C361S281000

Reexamination Certificate

active

06944008

ABSTRACT:
A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems (“MEMS”) device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.

REFERENCES:
patent: 5949944 (1999-09-01), Minford et al.
patent: 2002/0139647 (2002-10-01), Bernstein

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