Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-06-22
1997-03-18
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257216, 257219, 257250, H01L 27148
Patent
active
056125542
ABSTRACT:
In a charge detection device of a charge coupled device, an unnecessary overlap between a floating gate and other gates are reduced. A gate of a source follower amplifier is also formed in an active region. Further, the floating gate is connected to a gate of the source follower amplifier, and a bias gate and the floating gate overlap above a field oxide film. A bias gate voltage is controlled according to fluctuations of floating gate voltage. Thus, floating gate potential is kept constant.
REFERENCES:
patent: 4993053 (1991-02-01), Itoh et al.
patent: 5286989 (1994-02-01), Yonemoto
patent: 5294817 (1994-03-01), Yamamoto
IEEE International Solid-State Circuits Conference, Feb. 15, 1973, Digest of Technical Papers pp. 154-155, D.D. Wen et al., "Session XII: Amplifier Techniques--Analysis and Design of a Single-Stage Floating Gate Amplifier".
IEEE Journal of Solid-State Circuits, vol. SC-9, No. 6, Dec. 1994, pp. 410-414, D.D. Wen, "Design and Operation of a Floating Gate Amplifier".
Abraham Fetsum
Fahmy Wael
Matsushita Electric - Industrial Co., Ltd.
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