Semiconductor electron emission element

Details Semiconductor electron emission element Semiconductor electron emission element

1994-04-07

1995-05-09

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257475, H01L 2948, H01L 2956, H01L 2964

Patent

active

054142725

ABSTRACT:
A semiconductor element emission element having a Schottky junction in a surface region of a semiconductor, comprises a first region having a first carrier concentration, a second region having a second carrier concentration, and a third region having a third carrier concentration. All of the regions are located below an electrode forming the Schottky junction. The first, second, and third carrier concentrations satisfy a condition that the first carrier concentration of the first region is higher than the second carrier concentration of the second region and that the second carrier concentration of the second region is higher than the third carrier concentration of the third region. The first, second, and third regions have a structure that at least one second region having the second carrier concentration is located inside the third region of the third carrier concentration, and that at lease one first region having the first carrier concentration is located inside said second region having the second carrier concentration.

REFERENCES:
patent: 4259678 (1981-03-01), Van Gorkom et al.
patent: 4303930 (1981-12-01), Van Gorkom et al.
patent: 4506284 (1985-03-01), Shannon
patent: 4516146 (1985-05-01), Shannon et al.

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