Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-04-21
1999-10-05
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257232, 257233, 257234, H01L 27148, H01L 29768
Patent
active
059628820
ABSTRACT:
A charge coupled device includes a substrate, a photoelectric conversion region, a hole accumulation region, a vertical charge coupled region, and a buried transmission gate region. The substrate includes a surface with a light receiving region and a charge transmission region. The photoelectric conversion region is provided in a substrate beneath the light receiving and charge transmission regions, and the photoelectric conversion region generates a photoelectric signal responsive to light received at the light receiving region of the substrate surface. The hole accumulation region is provided in the substrate between the photoelectric conversion region and the light receiving region of the substrate surface. The vertical charge coupled region is provided in the substrate between the photoelectric conversion region and the charge transmission region of the substrate surface. The buried transmission gate region is provided between the vertical charge coupled region and the photoelectric conversion region. The buried transmission gate region transfers the photoelectric signal from the photoelectric conversion region to a portion of the vertical charge coupled region opposite the substrate surface. Related methods are also disclosed.
REFERENCES:
patent: 5471246 (1995-11-01), Nishima
patent: 5581099 (1996-12-01), Kusaka et al.
patent: 5619049 (1997-04-01), Kim
patent: 5668390 (1997-09-01), Morimoto
patent: 5828091 (1998-10-01), Kawai
Ozaki et al., A High-Packing Density Pixel With Punchthrough Read-Out Method For An HDTV Interline CCD, IEEE Transactions On Electron Devices, vol. 41, No. 7, Jul. 1994, pp. 1128-1135.
Mintel William
Samsung Electronics Co,. Ltd.
LandOfFree
Charge coupled devices including buried transmission gates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Charge coupled devices including buried transmission gates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge coupled devices including buried transmission gates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1174423