Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1976-07-08
1977-07-12
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 16, 357 24, 357 61, 357 63, 357 91, G11C 1928, H01L 2978, H01L 29161
Patent
active
040356655
ABSTRACT:
Asymmetrical potential wells are created in surface zones of a first doped semiconductor forming a substrate and are of greater depth at the downstream end than at the upstream end in order to ensure unidirectional transfer of the minority carriers. Regions localized at one extremity of the surface zones and constituting the potential wells are formed by a second semiconductor having a forbidden band width which is different from that of the first semiconductor.
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Donnelly et al., "The Photovoltaic Response of nGe-nSi Heterodiodes" Solid-State Electronics vol. 9, (1966), pp. 174-178.
Borel Joseph
Lacour Jacques
Merckel Gerard
Commissariat a l''Energie Atomique
Larkins William D.
Munson Gene M.
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