Charge-coupled device and process of making the device

Details Charge-coupled device and process of making the device Charge-coupled device and process of making the device

1990-02-06

1992-05-19

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430319, 430312, 437 53, 357 24, G03F 709, H01L 21339

Patent

active

051148331

ABSTRACT:
A charge-coupled device (CCD) of the two-phase type is disclosed. The CCD comprises two polysilicon levels which are electrically connected to form one clock phase. In order to provide a CCD of improved transfer efficiency, two implanted regions of different dopant levels are provided under each polysilicon level. When the CCD is clocked, a four-tier potential profile is produced.

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patent: 4900688 (1990-02-01), Halvis
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patent: 4992392 (1991-02-01), Nichols et al.

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