Charge coupled device and method of fabricating the same

Details Charge coupled device and method of fabricating the same Charge coupled device and method of fabricating the same

1999-11-23

2000-08-22

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

438144, 438145, 438146, 438147, 438148, 348311, 348317, H01L 21339

Patent

active

061071242

ABSTRACT:
A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a predetermined portion of the first conductivity type of BCCD region; a heavily doped impurity region formed in a predetermined portion of the BCCD region, the heavily doped impurity region having a predetermined distance from the first lightly doped impurity region; a second lightly doped impurity region formed between the first lightly doped impurity region and heavily doped impurity region; a first polysilicon gate formed over a portion of the BCCD region, placed between the first lightly doped impurity region and heavily doped impurity region; and a second polysilicon gate formed over the first lightly doped impurity region. The realization of high speed CCD and simplification of the circuit configuration can be obtained by using one-phase clocking.

REFERENCES:
patent: 3918997 (1975-11-01), Mohsen et al.
patent: 4345365 (1982-08-01), Carrigan
patent: 4686759 (1987-08-01), Pals et al.
patent: 4724218 (1988-02-01), Blanchard et al.
patent: 4774586 (1988-09-01), Koike et al.
patent: 5289022 (1994-02-01), Iizuka et al.
patent: 5314836 (1994-05-01), Lavine
patent: 5401679 (1995-03-01), Fukusho

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