Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1990-11-02
1993-02-23
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
377 62, 377 63, 257241, 257249, H01L 2978
Patent
active
051894980
ABSTRACT:
A charge coupled device includes a second conductivity type first horizontal channel in a first conductivity type semiconductor substrate, a second conductivity type second horizontal channel in the substrate at a predetermined distance from the first horizontal channel, and a second conductivity type transfer channel connecting the first horizontal channel with the second horizontal channel to enable transfer of charges from the first horizontal channel to the second horizontal channel. The pinning potential of the transfer channel is larger in absolute value than the pinning potential of the first and second horizontal channels, and the gate voltage pinning the transfer channel is smaller in absolute value than the gate voltage pinning the first and second horizontal channels. Therefore, the charges in the first horizontal channel can be transferred to the transfer channel by a gate voltage pinning the horizontal channel and the charges can be transferred from the first horizontal channel to the second horizontal channel by clock signals.
REFERENCES:
patent: 3763480 (1973-10-01), Weimer
patent: 3921194 (1975-11-01), Engeler et al.
patent: 4694316 (1987-09-01), Chabbal
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan Van
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