Electricity: power supply or regulation systems – Output level responsive – Using a three or more terminal semiconductive device as the...
Reexamination Certificate
2000-01-03
2001-04-24
Patel, Rajnikant D. (Department: 2838)
Electricity: power supply or regulation systems
Output level responsive
Using a three or more terminal semiconductive device as the...
C327S170000
Reexamination Certificate
active
06222354
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a charge compensator for a voltage regulator in a semiconductor device, and more particularly, to an improved charge compensator for adjusting charge compensation in accordance with characteristics of a semiconductor device.
2. Description of the Related Art
Semiconductor devices need a voltage regulator which is able to generate electric potential of an analog level and to provide appropriate charge required for supplying the generated potential. A voltage regulator generally includes a comparator which detects a difference between an output voltage to a load and a reference voltage, and feeds back the difference to an input of the comparator to maintain the output voltage at the reference voltage level. A gain of the comparator and a feedback speed of the voltage regulator depend on amount of charge drawn per unit time through the output of the voltage regulator. As more charge is drawn through the output of the voltage regulator per unit time, more current is needed to satisfy a required performance demand. As a result, the voltage regulator needs a larger area due to the need for more current, and it causes the size of semiconductors to increase.
In addition to developments in designing efficient voltage regulators, various circuits have been devised to reduce consumption of the charge drawn through the voltage regulator output. One of these circuits is a charge compensator. A charge compensator detects a transition region where a load connected to the voltage regulator output is changed from a steady state to another steady state. At the transition region, the charge compensator provides the load with an appropriate amount of charge from a steady power source, for example, a power supply voltage Vdd.
However, since conventional charge compensators are designed only in consideration of variations in state of the load connected to the voltage regulator output, there is a problem that the charge drawn through the voltage regulator output cannot be properly compensated for variations in operating conditions of a semiconductor device. For example, an amount of the charge drawn by the load connected to the voltage regulator changes depending on manufacturing processes, voltages in use and temperatures of the semiconductor. Nonetheless, the conventional charge compensators are designed regardless of such operating conditions, so that the charge compensators cannot provide an appropriate amount of charge sufficient for compensating for the variations in the operating conditions of a semiconductor.
Therefore, a need exists for a charge compensator for efficiently compensating the charge drawn by the load for variations in the operating conditions and characteristics of a semiconductor.
SUMMARY OF THE INVENTION
An object of the present invention is to provide an improved charge compensator for maintaining a required amount of charge compensation of a charge drawn through an output of a voltage regulator in spite of variations of manufacturing process, voltage in use and temperature in a semiconductor device.
In one aspect of the present invention, there is provided a charge compensator for maintaining a required amount of charge compensation of a charge drawn by a load in a semiconductor device in spite of variations in characteristics of the semiconductor device which depend on manufacturing processes, voltages in use and operating temperatures of the semiconductor device, and the charge compensator is connected to an output of a voltage regulator for regulating the voltage level to be provided to the load. The charge compensator includes a first detector for detecting characteristics of the semiconductor device and for outputting state signals representing the detected characteristics, a plurality of pass transistors for providing charge to the load, the pass transistors connected between a power supply voltage and the output of the voltage regulator, and a decoder for selectively driving the plurality of pass transistors based on the state signals from the first detector. The charge compensator may further include a second detector for detecting a transition region where the load is transited from one state to another state, wherein the decoder selectively turns on the plurality of pass transistors based on the state signals from the first detector and outputs from the second detector. Each of the plurality of pass transistors may provide a different amount of charge, and the decoder may drive one of the plurality of pass transistors based on the state signals from the first detector and the outputs from the second detector. The characteristics of the semiconductor device detected by the first detector may vary dependent on manufacturing processes, voltages in use, and operating temperatures of the semiconductor device.
In another aspect of the present invention, the charge compensator includes a first detector for detecting characteristics of the semiconductor device and for outputting state signals representing the detected characteristics, and a plurality of charge supply paths connected between a power supply voltage and the output of the voltage regulator, wherein the plurality of charge supply paths are selectively operated by the state signals from the first detector. The charge compensator may also include a transition detector for detecting transitions of the load which is transited from one state to another state at each of the transitions, wherein the plurality of charge supply paths are selectively operated based on the state signals from the PVT detector and outputs from the transition region detector. Each of the charge supply paths may provide a different amount of charge compensation. The transition detector may include a node for monitoring the transitions of the load. Each of the plurality of charge supply paths may include at least one transistor having a conduction path between the power supply voltage and the output of the voltage regulator, and the at least one transistor is activated in response to one of the signals output from the PVT detector and the transition detector. The transition detector may provide the plurality of charge supply paths with a first output signal representing a rising transition of the load and a second output signal representing a falling transition of the load. The transition detector may include a first delay circuit for holding the first output signal at a predetermined value for a time period of the rising transition, and a second delay circuit for holding the second output signal at a predetermined value for a time period of the falling transition. The characteristics of the semiconductor device detected by the first detector vary dependent on manufacturing processes, voltages in use, and operating temperatures of the semiconductor device.
These and other objects, features and advantages of the present invention will become apparent from the following detailed description of illustrative embodiments thereof, which is to be read in connection with the accompanying drawings.
REFERENCES:
patent: 4742247 (1988-05-01), Venkatesh
patent: 4922458 (1990-05-01), Watanabe et al.
patent: 6047346 (2000-04-01), Lau et al.
F. Chau & Associates LLP
Patel Rajnikant D.
Samsung Electronics Co,. Ltd.
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