Channel-type stack capacitor for DRAM cell

Details Channel-type stack capacitor for DRAM cell Channel-type stack capacitor for DRAM cell

1995-12-06

1998-10-20

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257307, 257308, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

058250611

ABSTRACT:
The electrode of a storage capacitor of a DRAM cell lies diagonally along the memory cell. The diagonal layout makes the length of the capacitor longer than either the x-dimension or the y-dimension of the memory cell, thus increasing the storage capacitance.

REFERENCES:
patent: 4970564 (1990-11-01), Kimura et al.
patent: 5005103 (1991-04-01), Kwon et al.
patent: 5014103 (1991-05-01), Ema
patent: 5378906 (1995-01-01), Lee
patent: 5591998 (1997-01-01), Kimura et al.
patent: 5604365 (1997-02-01), Kajigaya et al.

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