Channel MOSFET with strained silicon channel on strained SiGe

Details Channel MOSFET with strained silicon channel on strained SiGe Channel MOSFET with strained silicon channel on strained SiGe

2005-12-06

2005-12-06

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S353000, C257S401000, C257S619000, C257S623000, C257S192000, C257S194000, C257S195000, C438S282000, C438S172000, C438S275000, C438S933000, C438S479000, C438S486000, C438S766000

Reexamination Certificate

active

06972461

ABSTRACT:
A structure for use as a MOSFET employs an SOI wafer with a SiGe island resting on the SOI layer and extending between two blocks that serve as source and drain; epitaxially grown Si on the vertical surfaces of the SiGe forms the transistor channel. The lattice structure of the SiGe is arranged such that the epitaxial Si has little or no strain in the direction between the S and D and a significant strain perpendicular to that direction.

REFERENCES:
patent: 2004/0108559 (2004-06-01), Sugii et al.
patent: 2004/0256647 (2004-12-01), Lee et al.
patent: 2005/0003599 (2005-01-01), Yeo et al.

Affiliated with

Also associated with

Rating

Channel MOSFET with strained silicon channel on strained SiGe does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Channel MOSFET with strained silicon channel on strained SiGe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Channel MOSFET with strained silicon channel on strained SiGe will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3507368