Chamber etching of plasma processing apparatus

Coating apparatus – Gas or vapor deposition – With treating means

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156345, 134 11, C23C 1600

Patent

active

058633391

ABSTRACT:
A plasma processing apparatus and method in which a counter electrode is connected to a high frequency power source to generate a plasma and the substrate electrode is grounded and in which the substrate electrode is connected to a high frequency power source and the counter electrode is grounded to perform chamber etching.

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patent: 5660671 (1997-08-01), Harada et al.
patent: 5688330 (1997-11-01), Ohmi
patent: 5705019 (1998-01-01), Yamada et al.

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