Chamber etching of plasma processing apparatus

Details Chamber etching of plasma processing apparatus Chamber etching of plasma processing apparatus

1998-10-05

2000-08-08

Gulakowski, Randy

Etching a substrate: processes

Etching and coating occur in the same processing chamber

118625, 134 11, 134 221, 156345, 427569, 438905, B05D 314

Patent

active

060997478

ABSTRACT:
A plasma processing apparatus and method in which a counter electrode is connected to a high frequency power source to generate a plasma and the substrate electrode is grounded and in which the substrate electrode is connected to a high frequency power source and the counter electrode is grounded to perform chamber etching.

REFERENCES:
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patent: 5449411 (1995-09-01), Fukuda et al.
patent: 5520142 (1996-05-01), Ikeda et al.
patent: 5531862 (1996-07-01), Otsubo et al.
patent: 5585012 (1996-12-01), Wu et al.
patent: 5660671 (1997-08-01), Harada et al.
patent: 5688330 (1997-11-01), Ohmi
patent: 5705019 (1998-01-01), Yamada et al.

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