Chalcogenide random access memory and method of fabricating...

Details Chalcogenide random access memory and method of fabricating... Chalcogenide random access memory and method of fabricating...

2005-12-06

2005-12-06

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S529000, C438S095000, C438S407000, C438S423000, C438S525000

Reexamination Certificate

active

06972429

ABSTRACT:
A method of fabricating a chalcogenide random access memory (CRAM) is provided. The method is to provide a substrate having a bottom electrode thereon and then form a chalcogenide film and a patterned mask corresponding to the bottom electrode sequentially over the substrate. Thereafter, using the patterned mask, an ion implantation is performed to convert a portion of the chalcogenide film into a modified region while the chalcogenide film underneath the patterned mask is prevented from receiving any dopants and hence is kept as a non-modified region. The modified region has a lower conductivity than the non-modified region. After that, the patterned mask is removed and then a top electrode is formed over the non-modified region. Utilizing the ion implantation as a modifying treatment, the contact area between the chalcogenide film and the bottom electrode is decreased and the operating current of the CRAM is reduced.

REFERENCES:
patent: 6566700 (2003-05-01), Xu
patent: 6599840 (2003-07-01), Wu et al.
patent: 2004/0157416 (2004-08-01), Moore et al.
patent: 2005/0127347 (2005-06-01), Choi et al.

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