Cermet etch technique

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156659, 156662, 156656, 156657, 252 792, 338308, H01L 21312, B44C 122, C03C 1500, C03C 2506

Patent

active

040813150

ABSTRACT:
An etching process for patterning cermet thin film resistors includes the provision of a layer of molybdenum over the cermet layer to provide a good adherent surface for a photoresist layer subsequently deposited thereon. After the photoresist and molybdenum layers are patterned in separate steps, the cermet is preferentially etched with hot phosphoric acid to produce the desired cermet resistance pattern.

REFERENCES:
patent: 3042566 (1962-07-01), Hardy
patent: 3135638 (1964-06-01), Cheney et al.
patent: 3398032 (1968-08-01), Glang et al.
patent: 3682729 (1972-08-01), Gukelberger et al.

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