Ceramic thin film memory device

Details Ceramic thin film memory device Ceramic thin film memory device

1992-12-09

1994-03-08

Clawson, Jr., Joseph E.

Static information storage and retrieval

Systems using particular element

Resistive

365163, 365174, 257 2, 257 5, G11C 1156

Patent

active

052933350

ABSTRACT:
A digital memory circuit for electronic applications. The circuit has at least one memory element connected in series with a load resistor. The digital memory circuit also includes a voltage supply and a data output terminal. The memory element in the digital memory circuit is in the form of a silicon dioxide film derived from a hydrogen silsesquioxane resin. The silicon dioxide film is characterized by a jV curve which includes both resistive and conductive regions for the memory element.

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