Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-02-01
2005-02-01
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S701000, C257S705000, C219S552000, C219S520000
Reexamination Certificate
active
06849938
ABSTRACT:
An object of the present invention is to provide a ceramic substrate for a semiconductor producing/examining device, capable of controlling the temperature of a resistance heating element, thereby suitably controlling the temperature of a semiconductor wafer placed on a ceramic substrate or the like and evenly heating the semiconductor wafer. The ceramic substrate for a semiconductor producing/examining device according to the present invention comprises at least a resistance heating element formed on a surface thereof or inside thereof, wherein a region: where a semiconductor wafer is directly placed; or where a semiconductor wafer is placed apart from the surface thereof while keeping a given distance, exists inside a surface region corresponding to the region where said resistance heating element is formed.
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Clark Jasmine
IBIDEN Co., Ltd.
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