Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-05-03
2005-05-03
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S700000, C257S701000, C257S758000, C257S705000, C257S620000, C501S098400, C501S152000, C279S128000, C361S234000, C428S689000, C428S698000
Reexamination Certificate
active
06888236
ABSTRACT:
A ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, can be used as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside or on the surface thereof has been sintered such that a fractured section thereof exhibits intergranular fracture.
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Hiramatsu Yasuji
Ito Yasutaka
Ozaki Atsushi
Ibiden Co. Ltd.
Williams Alexander Oscar
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