1982-12-10
1985-05-14
James, Andrew J.
357 67, 357 81, 357 74, 357 73, H01L 2334, H01L 2336, H01L 2314
Patent
active
045175845
ABSTRACT:
A semiconductor device with a semiconductor element encased in a hollow ceramic package. The portion of the package at which the semiconductor element is disposed is formed from a SiC-based substrate containing Be or a compound of Be with a thin SiO.sub.2 layer being capable of reacting with glass provided thereon and with a glass layer or a thin film circuit on the SiO.sub.2 layer.
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Matsushita Yasuo
Nakamura Kousuke
Ura Mitsuru
Clark Sheila V.
Hitachi , Ltd.
James Andrew J.
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