Ceramic capacitor and semiconductor device in which the ceramic

Details Ceramic capacitor and semiconductor device in which the ceramic Ceramic capacitor and semiconductor device in which the ceramic

1997-04-21

1998-10-27

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257535, 257700, 257703, 3613213, 501136, H01L 2976, H01L 2900, H01L 23053, H01L 2994

Patent

active

058280936

ABSTRACT:
In a capacitor, one capacitor electrode is formed on first principal face of a ceramic dielectric substrate. An area of a first capacitor electrode is smaller than an area of the first principal face. A second capacitor electrode is formed on a second principal face of the ceramic dielectric substrate, and connected to a lead electrode which is formed at the periphery of the first principal face of the ceramic dielectric substrate so as to be separated from the one capacitor electrode by a gap and to surround the first capacitor electrode. The ceramic capacitor is mounted on a semiconductor element through an insulating layer. The capacitor electrodes and lead electrode of the ceramic capacitor are connected to terminals of the semiconductor element by a wire bonding.

REFERENCES:
patent: 3638147 (1972-01-01), Denes
patent: 4109292 (1978-08-01), Shibayama et al.
patent: 4591947 (1986-05-01), Bagley et al.
patent: 4747014 (1988-05-01), Kaino et al.
patent: 4827328 (1989-05-01), Ozawa et al.
patent: 5049979 (1991-09-01), Hashemi et al.
patent: 5067006 (1991-11-01), Shiga
patent: 5416356 (1995-05-01), Staudinger et al.
Hashemi et al., "The Close Attached Capacitor: A Solution to Switching Noise Proble MS", IEEE Log No. 9203458, Mar. 16, 1992.

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