Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2007-05-29
2007-05-29
Ha, Nathan W. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
Reexamination Certificate
active
10269328
ABSTRACT:
A center pad type integrated circuit chip and a method of forming the same is presented. The chip comprises an integrated circuit chip having chip pads formed on a center region thereof and a jumper. The jumper includes a buffer layer arranged adjacent to a side of the chip pads and a plurality of jump metal lines formed on the buffer layer. The jump metal lines are spaced apart from each other.
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Jang Dong-Hyeon
Kim Gu-Sung
Ha Nathan W.
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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