Center gas feed apparatus for a high density plasma reactor

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118723I, 118723IR, H05H 100

Patent

active

060276061

ABSTRACT:
The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.

REFERENCES:
patent: 4948458 (1990-08-01), Ogle
patent: 5187454 (1993-02-01), Collins et al.
patent: 5392018 (1995-02-01), Collins et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Center gas feed apparatus for a high density plasma reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Center gas feed apparatus for a high density plasma reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Center gas feed apparatus for a high density plasma reactor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-517401

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.