Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-27
2005-12-27
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S471000, C257S330000, C438S268000, C438S270000
Reexamination Certificate
active
06979865
ABSTRACT:
A cellular MOSFET device has a cellular area (CA) comprising active MOSFET cells, and one or more Schottky diode areas (SA) accommodated within a deep end region (15) at a lateral boundary of this cellular area (CA). This deep end region (150) is laterally divided so as to accommodate the diode area (SA) therein. A diode portion (14d) of the first conductivity type of the drain region (14) extends upwardly through the laterally-divided deep end region (150) that is of the second conductivity type. The Schotty barrier (100) formed with this diode portion (14d) terminates laterally in the laterally-divided portions (150deep end region (150) which serve as a guard region and field-relief region for the Schottky diode.
REFERENCES:
patent: 4521795 (1985-06-01), Coe et al.
patent: 4754310 (1988-06-01), Coe
patent: 6049108 (2000-04-01), Williams et al.
patent: 6444527 (2002-09-01), Floyd et al.
patent: WO0051167 (2000-08-01), None
Peake Steven Thomas
Rogers Christopher Martin
Koninklijke Philips Electronics , N.V.
Tsai H. Jey
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