Cell with self-aligned contacts

Details Cell with self-aligned contacts Cell with self-aligned contacts

1995-11-06

1997-06-17

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257376, 257903, H01L 2976, H01L 2711

Patent

active

056400373

ABSTRACT:
Local interconnect structures and processes using dual-doped polysilicon. A single implant dopes part of the polysilicon local interconnect layer p-type, and also diffuses through the polysilicon interconnect layer to enhance the doping of the PMOS drain regions, and also (optionally) adds to the doping of the PMOS source regions to provide source/drain asymmetry. The polysilicon interconnect layer is clad to reduce its conductivity, optionally with patterned rather than global cladding so that the diode can be used as a load element if desired.

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Pfiester, et al., "A Cobalt Salicide CMOS Process with TiN-Strapped Polysilicon Gates," IEEE Electron Device Letters, vol. 12, No. 6 Jun. 1991.
Pfiester, et al., "A TiN Strapped Polysilicon Gate Cobalt Salicide CMOS Process," IEDM, p. 242 (1990).
Tang, et al., "Titanium Nitride Local Interconnect Technology for VLSI," IEEE Transactions on Electron Devices, vol. ED-24, No. 3 (1987).

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