Cell structure of non-volatile memory device and method for...

Details Cell structure of non-volatile memory device and method for... Cell structure of non-volatile memory device and method for...

2006-02-07

2006-02-07

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000

Reexamination Certificate

active

06995421

ABSTRACT:
A cell structure of a non-volatile memory device, which uses a nitride layer as a floating gate spacer, includes a gate stack and a floating gate transistor formed over a semiconductor substrate. The gate stack includes a first portion of a floating gate, a control gate formed over the first portion of the floating gate, and a non-nitride spacer adjacent to sidewalls of the first portion of floating gate. The floating gate transistor includes a second portion of the floating gate, which substantially overlaps a source and/or drain formed in the substrate. The application of ultraviolet rays to the non-nitride spacer of a programmed cell can causes the second portion of the floating gate to discharge, thereby easily erasing the programmed cell.

REFERENCES:
patent: 5422504 (1995-06-01), Chang et al.
patent: 6177318 (2001-01-01), Ogura et al.
patent: 6774431 (2004-08-01), Rudeck
patent: 6838342 (2005-01-01), Ding
patent: 6849506 (2005-02-01), Na et al.
patent: 2004/0152268 (2004-08-01), Chu et al.

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