Cell structure for mask ROM

Details Cell structure for mask ROM Cell structure for mask ROM

1997-09-25

2000-04-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257391, 257411, H01L 2976

Patent

active

060464828

ABSTRACT:
A mask read-only-memory cell structure without ROM code implantation is presented. By using double polysilicon technology, ROM code cells which store data "0" can be replaced by cells with double polysilicon layers and an insulating layer between them. Normal cells with double polysilicon layers but without an insulating layer between them form normal cells store data "1". According to the invention, further scaling of mask ROM is possible and operating condition can be released because of high junction breakdown voltage. Furthermore, the double polysilicon technology makes redundancy circuit more easily to implement.

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