Cell structure for low electric power static RAM

Details Cell structure for low electric power static RAM Cell structure for low electric power static RAM

1999-05-04

2000-08-29

Mai, Son

Static information storage and retrieval

Systems using particular element

Flip-flop

36518909, 365227, 365229, G11C 1100, G11C 700

Patent

active

06111779&

ABSTRACT:
A cell structure for a low electric power static RAM is disclosed and includes a data retention voltage detector for detecting a data retention voltage, a cell load controller for controlling a cell voltage, a load resistor, an access NMOS transistor, and a drive NMOS transistor.

REFERENCES:
patent: 5189316 (1993-02-01), Murakami et al.
patent: 5491661 (1996-02-01), Motomura
patent: 5581500 (1996-12-01), D'Souza
patent: 5600588 (1997-02-01), Kawashima
patent: 5734622 (1998-03-01), Furumochi et al.
patent: 5991191 (1999-11-01), Rao

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