Cell structure for a programmable read only memory device

Details Cell structure for a programmable read only memory device Cell structure for a programmable read only memory device

1992-03-12

1993-08-31

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, 257322, 257364, H01L 2978

Patent

active

052412024

ABSTRACT:
A PROM cell allows improved, lower voltage programming and reduced leakage of the charge from the floating gate to the substrate (channel) region. The inventive cell uses a thin gate oxide layer along with a floating gate which is lightly doped except on one edge. This edge, for example near the drain region, is heavily doped with an angled implant. The thin gate oxide functions as thick oxide under the lightly doped region, thereby preventing the leakage and high coupling between the substrate and floating gate of a conventional thin oxide layer. The thin oxide under the heavily doped areas of the floating gate functions as thin oxide, thereby allowing improved, lower voltage programming.

REFERENCES:
patent: 5021848 (1991-06-01), Chiu

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