Cell for random access memory

Details Cell for random access memory Cell for random access memory

1993-11-10

1994-12-27

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Flip-flop

257538, 257903, 257904, G11C 1100

Patent

active

053771400

ABSTRACT:
The memory ratio is improved and the data holding ability on reading data is enhanced by providing a resistive element between an access transistor and a flip-flop, which form a memory cell of a static memory. Even if the threshold voltage of the access transistor is lowered, the memory cell ratio can be increased. Accordingly, the minimum operating voltage can be lowered and the operating margin for a power source voltage can be increased and simultaneously with this, the soft error immunity can be enhanced. Since the memory cell ratio of the semiconductor memory of the present invention is enhanced by the resistive element, the necessity to preset a lower current drive ability of the access transistor for a drive transistor is decreased. As a result of this, the size of the memory cell can be decreased. Further, the current consumed by the memory cell is decreased by the resistive element.

REFERENCES:
patent: 4805147 (1989-02-01), Yamanaka et al.
patent: 4890148 (1989-12-01), Ikeda et al.
patent: 4975875 (1990-12-01), Ito
patent: 4995000 (1991-02-01), Tenell
patent: 5132929 (1992-07-01), Ochii

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