Cell array of FeRAM

Details Cell array of FeRAM Cell array of FeRAM

2005-02-08

2005-02-08

Nguyen, Tan T. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

06853575

ABSTRACT:
A cell array of a NAND type ferro-dielectric memory is disclosed. The cell array of ferro-dielectric memory system, including: a plurality of unit cell strings coupled to one bit line; and a plurality of string selectors between each of the unit cell strings and the bit line, wherein only one unit cell string is connected to the bit line through one string selectors. The present invention can decrease a size of cell by eliminating a bit line contact formed in cells and controls a bit line capacitance by using selection transistor, therefore, the present invention can control optimum bit line capacitance by gaining the maximum sense margin.

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