Ceiling arrangement for an epitaxial growth reactor

Details Ceiling arrangement for an epitaxial growth reactor Ceiling arrangement for an epitaxial growth reactor

1997-01-28

1999-09-21

Bueker, Richard

Coating apparatus

Gas or vapor deposition

118725, C23C 1600

Patent

active

059548819

ABSTRACT:
A ceiling arrangement for a high temperature epitaxial growth reactor in which silicon carbide epitaxial layers may be grown. The ceiling includes an upper layer of carbon foam and a lower layer of graphite bonded thereto. A support structure for the ceiling is coupled to a nozzle assembly, holding a gas delivering nozzle. The support structure has a lower flange portion which includes an upwardly extending projection defining a knife edge upon which the ceiling rests. The arrangement minimizes unwanted heat transfer from the ceiling to the nozzle assembly and nozzle.

REFERENCES:
patent: 3641974 (1972-02-01), Yamada
patent: 3696779 (1972-10-01), Murai

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