CCD with improved charge transfer

Details CCD with improved charge transfer CCD with improved charge transfer

2006-04-26

2010-10-05

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

C438S147000, C438S549000, C257SE21617, C257SE21644

Reexamination Certificate

active

07807514

ABSTRACT:
A method of forming a charge-coupled device including the steps of forming well or substrate of a first conductivity type; a buried channel of a second conductivity type; a plurality of first gate electrodes; partially coating the first gate electrodes with a mask substantially aligned to an edge of the first gate electrodes; implanting ions of the first conductivity type of sufficient energy to penetrate the first gates and into the buried channel; and a plurality of second gate electrodes covering regions each over the buried channel between the first gate electrodes.

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