CCD-type solid state image pickup with overflow drain structure

Details CCD-type solid state image pickup with overflow drain structure CCD-type solid state image pickup with overflow drain structure

1994-05-18

1997-04-08

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257230, 257232, 257435, H01L 27148, H01L 29768, H01L 310232

Patent

active

056190492

ABSTRACT:
A charge-coupled device type solid state image pickup in which the overflow drain is formed at a high concentration on each photo-sensitive well. A high-concentration impurity layer is formed in the top layer of a PNPN structure to act as a drain against overflow. The structure enables overflow and electronic shutter operation even under low voltage conditions and may be realized on a chip.

REFERENCES:
patent: 5045906 (1991-09-01), Nagaya
patent: 5327004 (1994-07-01), Kurusu et al.
patent: 5349216 (1994-09-01), Lee et al.
Blooming Suppression Mechanism for an Interline CCD Image Sensor with a Vertical Overflow Drain, pp. 501-504, 19883 IEEE IEDM.
A 1/3-in 510 (H).times.492(V) CCD Image Sensor with Mirror Image Function, pp. 954-959, 1991 IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991.

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