CCD solid state image sensor with two horizontal transfer CCDs c

Details CCD solid state image sensor with two horizontal transfer CCDs c CCD solid state image sensor with two horizontal transfer CCDs c

1989-12-05

1991-08-27

Groody, James J.

Facsimile and static presentation processing

Facsimile

Recording apparatus

35821329, 357 24, H04N 314, H04N 5335, H01L 2978

Patent

active

050438190

ABSTRACT:
A CCD solid state image sensor has first and second horizontal transfer CCDs located at the upper and lower sides, respectively, of a sensing element array. Two polysilicon electrodes are located in each row of the array, a first polysilicon electrode being arranged in an up position in even-numbered columns and in a down position in odd-numbered columns, and a second polysilicon electrode being arranged in a down position in even-numbered columns and in an up position in odd-numbered columns. These electrodes form vertical transfer channels. Signal changes in the vertical transfer channels corresponding to even-numbered columns are shifted in the upward direction and the signal changes in the vertical transfer channels corresponding to the odd-numbered columns are shifted in the downward direction, onto the first and second horizontal transfer CCDs, respectively. Thus the need for a transfer electrode between the horizontal CCDs is eliminated, creating a two-level electrode structure.

REFERENCES:
patent: 4712137 (1987-12-01), Kadekodi et al.
patent: 4743778 (1988-05-01), Takatsu et al.
patent: 4819072 (1989-04-01), Boucharlat et al.

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