Cavity structure for semiconductor structures

Details Cavity structure for semiconductor structures Cavity structure for semiconductor structures

2008-05-27

2008-05-27

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257S704000, C257S433000

Reexamination Certificate

active

11166454

ABSTRACT:
A method for providing a cavity structure on a semiconductor device is provided. The method of forming the cavity structure, which may be particularly useful in packaging an image sensor, includes forming a spacer layer over a substrate. The spacer layer may be formed from a photo-sensitive material which may be patterned using photolithography techniques to form cavity walls surrounding dies on the wafer. A packaging layer, such as a substantially transparent layer, may be placed directly upon the cavity walls prior to curing. In another embodiment, the cavity walls are cured, an adhesive is applied to a surface of the cavity walls, and the packaging layer placed upon the adhesive. Thereafter, the wafer may be diced and the individual dies may be packaged for use.

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