Cathode targets of silicon and transition metal

Details Cathode targets of silicon and transition metal Cathode targets of silicon and transition metal

1997-09-08

2002-04-02

Nguyen, Nam (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S298130, C204S298120, C204S192150, C148S423000, C420S428000, C420S578000, C423S324000

Reexamination Certificate

active

06365014

ABSTRACT:

BACKGROUND
1. Field of the Invention
The present invention relates generally to the art of sputtering silicon-containing target materials and to the art of fabricating cathode targets of silicon alloys comprising transition metal.
2. Description of the Related Art
U.S. Pat. Nos. 4,990,234 and 5,170,291 to Szczyrbowski et al. disclose sputtering silica and silicides, such as nickel silicide (NiSi
2
), in an oxidizing atmosphere to deposit dielectric oxide films.
U.S. Pat. No. 5,320,729 to Narizuka et al. discloses a sputtering target with which a high resistivity thin film consisting of chromium, silicon and oxygen can be produced. The target is formed by selecting the grain size of chromium powder and silicon dioxide powder drying the powders by heating and mixing the dried powders to obtain a mixed powder containing from 20 to 80 percent by weight of chromium, preferably 50 to 80 percent, the remainder being silicon dioxide, packing the mixed powder in a die, and sintering the packed powder by hot pressing to produce a target which has a two phase mixed structure. The sputtering target is used to manufacture thin film resistors and electrical circuits.


REFERENCES:
patent: 3555345 (1971-01-01), Collings et al.
patent: 4157315 (1979-06-01), Michels et al.
patent: 4450201 (1984-05-01), Brill et al.
patent: 4586957 (1986-05-01), Masumoto et al.
patent: 4721991 (1988-01-01), Ohtaki et al.
patent: 4758321 (1988-07-01), Vugts
patent: 4769291 (1988-09-01), Belkind et al.
patent: 4846949 (1989-07-01), Tu et al.
patent: 4847157 (1989-07-01), Goodman et al.
patent: 4857094 (1989-08-01), Groth et al.
patent: 4990234 (1991-02-01), Szczyrbowski et al.
patent: 4992087 (1991-02-01), Holscher
patent: 4992095 (1991-02-01), Nate et al.
patent: 5170291 (1992-12-01), Szczyrbowski et al.
patent: 5282946 (1994-02-01), Kinoshita
patent: 5320729 (1994-06-01), Narizuka et al.
patent: 5417827 (1995-05-01), Finley
patent: 550365 (1956-09-01), None
patent: 218493 (1985-02-01), None
patent: 0 226 993 (1987-07-01), None
patent: 0 233 003 (1987-08-01), None
patent: 0 239 280 (1987-09-01), None
patent: 0 281 894 (1988-09-01), None
patent: 0 301 755 (1989-02-01), None
patent: 0 546 302 (1993-06-01), None
patent: 2 138 026 (1984-10-01), None
patent: 2201428 (1988-09-01), None
patent: 59-157282 (1984-09-01), None
patent: 63-242948 (1988-10-01), None
patent: 2-250964 (1990-10-01), None
patent: 91-311723 (1991-10-01), None
patent: 4-276070 (1992-10-01), None
patent: 5-86456 (1993-04-01), None
patent: 5-247638 (1993-09-01), None
patent: 88/01568 (1988-03-01), None
patent: 90/09883 (1990-09-01), None
Saito et al., “Lifetime Of Heat-Resistive Films Prepared By Sputtering”, Thin Film Solids, vol. 69, pp. 33-37, 1980.*
“Properties of d.c. Magnetron Sputtered NiSiOx-Films” by J. Szczyrbowski et al., SPIE vol. 1272, pp. 38-45,Optical Materials Technology for Energy and Solar Energy Conversion IX(1990).
Francois et al., “Reflectivity of ScNxThin Films: Comparison with TiNx, TiNxCyand ZrNxCoatings and Application to the Photothermal Conversation of Solar Energy”,Thin Solid Films, 127 (1985) pp. 205-214.
Valkonen et al., “Selective Transition of Thin TiN-Films”,SPIE Int. Soc. Opt. Eng., 1983, pp. 375-380.
Chemical Abstracts, vol. 111, No. 2, Jul. 10, 1989, Columbus, Ohio, US; abstract No. 11542q, p. 271; JP 63-242,948.
Chemical Abstracts, vol. 114, No. 18, May 6, 1991, Columbus, Ohio, US; abstract No. 169829k, p. 346, JP 02-233,534.
E. Randich et al., “Chemically Vapor-Deposited ZrB2As A Selective Solar Absorber”,Thin Solid Films, 83 (1981) pp. 393-398.
B. Karlsson et al., “Optical Properties of CVD-Coated TiN, ZrN and HfN”,Solar Energy Materials, 7 (1983) pp. 401-411.
C. G. Ribbing et al., “Optical Properties of Noble Metal Like Films”,Thin Film Technologies II, SPIE vol. 652, (1986) pp. 166-178.

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