Cathode targets of silicon and transition metal

Details Cathode targets of silicon and transition metal Cathode targets of silicon and transition metal

1993-03-31

1995-05-23

Breneman, R. Bruce

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20419226, 20419227, 20429813, C23C 1434

Patent

active

054178274

ABSTRACT:
Silicon-nickel cathode targets comprising 3 to 18 weight percent nickel are disclosed for sputtering low absorbance coatings of silicon-nickel alloy in atmospheres comprising reactive gases such as nitrogen, oxygen and mixtures thereof which may further comprise inert gas such as argon to form nitrides, oxides, and oxynitrides as well as metallic films. The presence of nickel in the cathode target in the range of 3 to 18 weight percent provides target stability and enhanced sputtering rates over targets of silicon alone or alloyed with aluminum, while maintaining a low coating refractive index and low absorbance, not only when sputtering in oxygen to produce an oxide coating, but also when sputtering in nitrogen or a mixture of nitrogen and oxygen to produce coatings of silicon-nickel nitride or oxynitride respectively.

REFERENCES:
patent: 4769291 (1988-09-01), Belkind et al.
patent: 4990234 (1991-02-01), Szczyrbowski et al.

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