Cathode sputtering apparatus on the magnetron principle with a h

Details Cathode sputtering apparatus on the magnetron principle with a h Cathode sputtering apparatus on the magnetron principle with a h

1989-04-27

1990-10-30

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204298240, C23C 1435, C23C 1456

Patent

active

049666770

ABSTRACT:
Cathode sputtering apparatus having a hollow cathode on the magnetron principle with a cathode base (5) in which a hollow target (9) with a cylindrical sputtering surface (10) and a cylindrical outer surface is disposed. The cathode base (5) has a cooling passage (6). The target is externally surrounded by a magnet system (18) with magnet poles for the production of a rotationally symmetrical tunnel of magnetic lines of force closed on the circumference and over the sputtering surface. Outside of the space surrounded by the sputtering surface (10) there is disposed at least one anode (3, 4). A transport path for a substrate to be coated passes through the target (9) and the at least one anode.
The cooling passage (6) is sealed off from the target (9) by a wall (7). Due to a narrow clearance, as soon as the target (9) reaches its operating temperature it comes in thermal contact with the wall (7). The [north] pole faces (N) of the magnet system (18) are on one side and the other [south] pole faces (S) lie on the other side of the end faces of the target (9) and radially on a radius which is equal to or greater than the radius of the sputtering surface (10). The magnet system (18) is held at a freely adjustable ("floating") potential in operation by insulating spaces (11, 19, 10).

REFERENCES:
patent: 3725238 (1973-04-01), Fischbein et al.
patent: 3855110 (1974-12-01), Quinn et al.
patent: 3878085 (1975-04-01), Corbani
patent: 3884793 (1975-05-01), Penfold et al.
patent: 4407713 (1983-10-01), Zega

Affiliated with

Also associated with

Rating

Cathode sputtering apparatus on the magnetron principle with a h does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cathode sputtering apparatus on the magnetron principle with a h, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cathode sputtering apparatus on the magnetron principle with a h will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-273760