Cathode mounting for ion source with indirectly heated cathode

Radiant energy – Ion generation – Electron bombardment type

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

250423R, 25049221, H01J 3708

Patent

active

057638900

ABSTRACT:
An ion source is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber.

REFERENCES:
patent: 4641031 (1987-02-01), Ito et al.
patent: 4672210 (1987-06-01), Armstrong et al.
patent: 5026997 (1991-06-01), Benveniste
patent: 5262652 (1993-11-01), Bright et al.
patent: 5420415 (1995-05-01), Trueira
patent: 5497006 (1996-03-01), Sferlazzo et al.
patent: 5554852 (1996-09-01), Bright et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Cathode mounting for ion source with indirectly heated cathode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cathode mounting for ion source with indirectly heated cathode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cathode mounting for ion source with indirectly heated cathode will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2203028

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.