Cathode cell design

Details Cathode cell design Cathode cell design

2011-08-02

2011-08-02

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S268000

Reexamination Certificate

active

07989878

ABSTRACT:
An n-channel insulated gate semiconductor device with an active cell (5) comprising a p channel well region (6) surrounded by an n type third layer (8), the device further comprising additional well regions (11) formed adjacent to the channel well region (6) outside the active semiconductor cell (5) has enhanced safe operating are capability. The additional well regions (11) outside the active cell (5) do not affect the active cell design in terms of cell pitch, i.e. the design rules for cell spacing, and hole drainage between the cells, hence resulting in optimum carrier profile at the emitter side for low on-state losses.

REFERENCES:
patent: 5023678 (1991-06-01), Kinzer
patent: 5286984 (1994-02-01), Nakagawa et al.
patent: 5945692 (1999-08-01), Yano et al.
patent: 6025622 (2000-02-01), Nakagawa et al.
patent: 6133607 (2000-10-01), Funaki et al.
patent: 6147381 (2000-11-01), Hirler et al.
patent: 6207993 (2001-03-01), Ishimura et al.
patent: 6784513 (2004-08-01), Aki et al.
patent: 6831345 (2004-12-01), Kinoshita et al.
patent: 6894319 (2005-05-01), Kobayashi et al.
patent: 6911692 (2005-06-01), Kobayashi et al.
patent: 6943410 (2005-09-01), Fujihira et al.
patent: 7049675 (2006-05-01), Kinoshita et al.
patent: 2004/0256691 (2004-12-01), Nemoto et al.
patent: 0 837 508 (1998-04-01), None
patent: 98/38681 (1998-09-01), None
*PCT/ISA/210.
*PCT/ISA/237.
*EPO Form 1507 0.

Affiliated with

Also associated with

Rating

Cathode cell design does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cathode cell design, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cathode cell design will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2673213