Catalytic nucleation monolayer for metal seed layers

Details Catalytic nucleation monolayer for metal seed layers Catalytic nucleation monolayer for metal seed layers

2008-04-29

2008-04-29

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S221000, C438S240000, C438S597000, C257S304000, C257S310000, C257S374000

Reexamination Certificate

active

07365011

ABSTRACT:
A method of forming a copper interconnect on a substrate comprises providing a substrate that includes a dielectric layer and a trench etched into the dielectric layer, depositing a barrier layer within the trench, using a palladium immobilization process to form a metal catalyst layer on the barrier layer, activating the metal catalyst layer, and using a vapor deposition process to deposit a copper seed layer onto the metal catalyst layer. The vapor deposition process may include PVD, CVD, or ALD. An electroplating process or an electroless plating process may then be used to deposit a bulk copper layer onto the copper seed layer to fill the trench. A planarization process may follow to form the final interconnect structure.

REFERENCES:
patent: 7045461 (2006-05-01), Imori et al.
patent: 2001/0019891 (2001-09-01), Koh et al.
patent: 2002/0009884 (2002-01-01), Pyo
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patent: 2005/0124154 (2005-06-01), Park et al.
Pending U.S. Appl. No. 11/233,297, filed Sep. 21, 2005; Inventor: Arnel Fajardo et al.

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