Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-05-01
1999-11-09
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257779, H01L 2348, H01L 2352, H01L 2940
Patent
active
059820381
ABSTRACT:
The present invention relates generally to a new scheme of providing a seal for semi-conductor substrates and chip carriers. More particularly, the invention encompasses a structure and a method that uses a multi-layer metallic seal to provide protection to chips on a chip carrier. This multi-layer metal seal provides both enhanced hermeticity lifetime and environmental protection.
For the preferred embodiment the multi-layer metallic seal is a two layer, solder structure which is used to create a low cost, high reliability, hermetic seal for the module. This solder structure has a thick high melting point temperature region that is attached to a cap, and a thin interconnecting region of lower melting point temperature region for sealing the substrate to the cap.
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Bolde Lannie R.
Covell II James H.
Edwards David L.
Goldmann Lewis S.
Gruber Peter A.
Ahsan Aziz M.
Cao Phat X.
Chaudhuri Olik
International Business Machines - Corporation
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