Electronic digital logic circuitry – Signal sensitivity or transmission integrity – Bus or line termination
Reexamination Certificate
2002-09-26
2004-08-10
Tan, Vibol (Department: 2819)
Electronic digital logic circuitry
Signal sensitivity or transmission integrity
Bus or line termination
C326S086000, C326S031000, C327S108000, C327S530000, C327S534000
Reexamination Certificate
active
06774665
ABSTRACT:
BACKGROUND OF THE INVENTION
As shown in 
FIG. 1
, a typical computer system 
10
 includes at least a microprocessor 
12
 (often referred to and known as “CPU”) and some form of memory 
14
. The microprocessor 
12
 has, among other components, arithmetic, logic, and control circuitry that interpret and execute instructions necessary for the operation and use of the computer system 
10
. Specifically, 
FIG. 1
 shows the computer system 
10
 having the microprocessor 
12
, memory 
14
, crystal 
18
, integrated circuits (ICs) 
16
 that have various functionalities, and communication paths 
19
, i.e., buses and wires, that are necessary for the transfer of data among the aforementioned components of the computer system 
10
.
In order to keep pace with improving technologies, computer system and circuit designers are constantly trying to improve their designs through the most cost-effective means. As faster versions of a particular CPU become available, a designer will often try to improve the throughput of their existing design by simply increasing the CPU clock frequency. However, after a certain point, the speed of the system's main memory becomes a limiting factor in optimizing the throughput of the system. To this end, designers have produced faster memories, which, in turn, has necessitated high-speed memory interfaces.
One type of design that has been used for high-speed memory interface applications involves the use of stub series termination logic (SSTL). A SSTL interface standard was created by the Joint Electron Device Engineering Council (JEDEC) to provide a termination scheme for high speed signaling in applications such as double data rate synchronous dynamic random access memory (DDR-SDRAM). The SSTL interface standard specifies particular switching characteristics such that high operating frequencies are available. As operating frequencies continue to increase and as the demand for faster memory interfaces has and continues to grow, the SSTL interface standard continues to enjoy wide acceptance.
The SSTL interface standard defines operation around a reference voltage potential. A high or low bit may be transmitted as a voltage potential that is higher or lower than a reference voltage potential, respectively. There is a likelihood that the supply voltage for the SSTL interface will exceed the voltage tolerances of low-voltage transistors that are designed to operate at voltages below that of the SSTL interface. If a large voltage is placed across one of these low-voltage transistors, the gate oxide layer of the transistor may breakdown, which, in turn, could cause circuit malfunction
FIG. 2
 shows a typical SSTL output buffer pull down circuit 
200
 that includes resistors R
1 
202
 and R
2 
204
 to provide a bias signal on node N
1 
211
. A cascode circuit includes transistors 
218
 and 
216
. The cascode circuit is used to prevent the possible breakdown of transistors 
218
 and 
216
 when an output signal 
215
 is at a maximum voltage potential.
The output signal 
215
 is pulled down depending on an input_low signal. The input_low signal may have a voltage potential range less than a maximum voltage potential of the output signal 
215
, where the voltage potential range is defined as the difference between a maximum and minimum voltage potential applied on the input_low signal.
In 
FIG. 2
, the transistor 
218
 is connected to the bias signal on node N
1 
211
. To reduce power consumption, resistors R
1 
202
 and R
2 
204
 are typically large valued to reduce current through the voltage divider formed by resistors R
1 
202
 and R
2 
204
. During operation of the SSTL output buffer, the SSTL output buffer pull down circuit 
200
 may be designed to have a voltage potential on the input_low signal that is less than V
DD 
and turns on the transistor 
216
. Accordingly, the SSTL output buffer pull down circuit 
200
 pulls down the voltage potential of the output signal 
215
. Inherent capacitances 
230
 and 
233
 formed between the output signal 
215
 and the node N
1 
211
, and the signal 
217
 and the node N
1 
211
, respectively, may cause the voltage potential of the bias signal on node N
1 
211
 to decrease. Because the resistors R
1 
202
 and R
2 
204
 are typically large valued, the resistors R
1 
202
 and R
2 
204
 may be slow to restore the desired bias voltage potential of the bias signal on node N
1 
211
. Accordingly, the resistance formed by transistor 
218
 increases, and the output signal 
215
 may not be pulled down at the desired transition rate or obtain the desired voltage potential. Conversely, resistors R
1 
202
 and R
2 
204
 may be moderate or small valued to improve the ability to maintain a desired bias voltage potential of the bias signal on node N
1 
211
. As the combined value of resistors R
1 
202
 and R
2 
204
 decrease, the power and current consumed by the resistors R
1 
202
 and R
2 
204
 increases.
FIG. 3
 shows a typical SSTL output buffer pull up circuit 
300
 that includes resistors R
1 
302
 and R
2 
304
 to provide a bias signal on node N
1 
311
. A cascode circuit includes transistors 
316
 and 
318
. The cascode circuit is used to prevent the possible breakdown of transistors 
316
 and 
318
 when an output signal 
315
 is at a minimum voltage potential.
The output signal 
315
 is pulled up depending on an input_high signal. The input_high signal may have a voltage potential range less than a maximum voltage potential of the output signal 
315
, where the voltage potential range is defined as the difference between a maximum and minimum voltage potential applied on the input_high signal.
In 
FIG. 3
, the transistor 
318
 is connected to the bias signal on node N
1 
311
. To reduce power consumption, resistors R
1 
302
 and R
2 
304
 are typically large valued to reduce current through the voltage divider formed by resistors R
1 
302
 and R
2 
304
. During operation of the SSTL output buffer, the SSTL output buffer pull up circuit 
300
 may be designed to have a voltage potential range on the input_high signal that is less than the V
DD 
to V
SS 
range and turns on the transistor 
316
. Accordingly, the SSTL output buffer pull up circuit 
300
 pulls up the voltage potential of the output signal 
315
. Inherent capacitances 
330
 and 
333
 formed between the output signal 
315
 and the node N
1 
311
, and the signal 
317
 and the node N
1 
311
, respectively, may cause the voltage potential of the bias signal on node N
1 
311
 to increase. Because the resistors R
1 
302
 and R
2 
304
 are typically large valued, the resistors R
1 
302
 and R
2 
304
 may be slow to restore the desired bias voltage potential of the bias signal on node N
1 
311
. Accordingly, the resistance formed by transistor 
318
 increases, and the output signal 
315
 may not be pulled up at the desired transition rate or obtain the desired voltage potential. Conversely, resistors R
1 
302
 and R
2 
304
 may be moderate or small valued to improve the ability to maintain a desired bias voltage potential of the bias signal on node N
1 
311
. As the combined value of resistors R
1 
302
 and R
2 
304
 decrease, the power and current consumed by the resistors R
1 
302
 and R
2 
304
 increases.
SUMMARY OF THE INVENTION
According to one aspect of the present invention, an integrated circuit comprises a biasing circuit arranged to generate a first bias signal; a source follower circuit operatively connected to the first bias signal where the source follower circuit is arranged to generate a second bias signal dependent on the first bias signal; and a cascode circuit operatively connected to the second bias signal where the cascode circuit is arranged to generate an output signal dependent on the second bias signal and an input signal.
According to another aspect, a method for performing a stub series termination logic operation comprises generating a first bias signal dependent on a power supply voltage potential; generating a second bias signal dependent on the first bias signal; and generating an output signal dependent on the second bias signal and an input signal
Amick Brian W.
Gauthier Claude R.
Tran Tri K.
Warriner Lynn A.
Osha & May L.L.P.
Sun Microsystems Inc.
Tan Vibol
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