Cascode current mirror and method

Details Cascode current mirror and method Cascode current mirror and method

2010-03-02

2010-12-14

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S401000, C257SE29027, C257SE21177, C438S149000

Reexamination Certificate

active

07851834

ABSTRACT:
Embodiments of a cascode amplifier (CA) include a bottom transistor with a relatively thin gate dielectric and higher ratio of channel length to width and a series coupled top transistor with a relatively thick gate dielectric and a lower ratio of channel length to width. A cascode current mirror (CCM) is formed using a coupled pair of CAs, one forming the reference current (RC) side and the other forming the mirror current side of the CCM. The gates of the bottom transistors are tied together and to the common node between the series coupled bottom and top transistors of the RC side, and the gates of the top transistors are coupled together and to the top drain node of the RC side. The area of the CCM can be substantially shrunk without adverse affect on the matching, noise performance and maximum allowable operating voltage.

REFERENCES:
patent: 6211659 (2001-04-01), Singh
patent: 6924693 (2005-08-01), Black

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