Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-07-24
2007-07-24
Zameke, David A. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE23060
Reexamination Certificate
active
10510588
ABSTRACT:
The carrier (30) comprises a first etch mask (14), a first metal layer (11), an intermediate layer (12), a second metal layer (13) and a second etch mask (17). Both the first and the second etch mask (14, 17) can be provided in one step by means of electrochemical plating. After the first metal layer (11) and the intermediate layer (12) have been patterned through the first etch mask (14), an electric element (20) can be suitably attached to the carrier (30) using conductive means. In this patterning operation, the intermediate layer (12) is etched further so as to create underetching below the first metal layer (11). After the provision of an encapsulation (40), the second metal layer (13) is patterned through the second etch mask (17). In this manner, a solderable device (10) is obtained without a photolithographic step during the assembly process.
REFERENCES:
patent: 6306685 (2001-10-01), Liu et al.
patent: 6351025 (2002-02-01), Ohsawa et al.
patent: 6451627 (2002-09-01), Coffman
Dijkstra Paul
Groenhuis Roelf Anco Jacob
Schriks Cornelis Gerardus
Van De Water Peter Wilhelmus Maria
NXP B.V.
Zameke David A.
Zawilski Peter
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