Carrier-lifetime-controlled selective etching process for semico

Details Carrier-lifetime-controlled selective etching process for semico Carrier-lifetime-controlled selective etching process for semico

1989-11-24

1992-03-03

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156654, 437234, H01L 2100

Patent

active

050929577

ABSTRACT:
The minority carrier lifetime is significantly much shorter in semiconductor materials with very high impurity concentrations than it is in semiconductor materials with lower impurity concentration levels. This phenomenon of reduced minority carrier lifetime in semiconductor materials having high impurity concentration is utilized to advantage for permitting highly selective semiconductor material etching to be achieved using a carrier-driven photochemical etching reaction. Various means may be employed for increasing the local impurity concentration level in specific near-surface regions of a semiconductor prior to subjecting the semiconductor material to a carrier-driven photochemical etching reaction. The regions having the localized increased impurity concentration form a self-aligned mask inhibiting photochemical etching at such localized regions while the adjacent regions not having increased impurity concentrations are selectively photochemically etched. Liquid- or gas-phase etching may be performed.

REFERENCES:
patent: 4514251 (1985-04-01), Van Ommen et al.
patent: 4523976 (1985-06-01), Bukhman
patent: 4584055 (1986-04-01), Kayamuma et al.
patent: 4595454 (1986-06-01), Dautremont-Smith et al.
patent: 4599136 (1986-07-01), Araps et al.
patent: 4601778 (1986-07-01), Robb
patent: 4648936 (1987-03-01), Ashby et al.
patent: 4648938 (1987-03-01), Ashby et al.
patent: 4652334 (1987-03-01), Jain et al.
patent: 4718972 (1988-01-01), Babu et al.
patent: 4732646 (1988-03-01), Elsner et al.
patent: 4750971 (1988-06-01), Maas et al.
patent: 4880493 (1989-11-01), Ashby et al.
C. I. H. Ashby, "Photochemical Dry Etching of GaAs", Applied Physics Letters, vol. 45, No. 8, 10/15/84, pp. 892-894.
C. I. H. Ashby et al. "Composition-Selective Photochemical Etching of Compound Semiconductors", Applied Physics Letters, vol. 47, No. 1, Jul. 1, 1985, pp. 62-63.
R. A. Smith, Semiconductors, 2nd Ed., Cambridge University Press New York, 1978, pp. 279-281.
C. I. H. Ashby et al., "Effect of the Band-Gap Characteristics on Laser-Induced Dry Etching of Semiconductors", Proc. 172nd Meeting of the Electrochemical Society, Honolulu, Oct. 18-23, 1987.

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