Caro's cleaning of SOG control wafer residue

Details Caro's cleaning of SOG control wafer residue Caro's cleaning of SOG control wafer residue

1998-06-18

2000-06-13

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

134 13, 438906, H01L 21302, B08B 314

Patent

active

06074961&

ABSTRACT:
A new method of recycling a spin-on-glass control wafer by removing spin-on-glass residue from the control wafer surface is described. A silicon control wafer is provided having a spin-on-glass layer coated thereon. The spin-on-glass layer is removed using a hydrofluoric acid dip wherein a silk-like spin-on-glass residue 15 remains on the silicon control wafer surface. The silicon control wafer surface is cleaned with a Caro's dip whereby the spin-on-glass residue is removed. Thereafter, the silicon control wafer can be reused.

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S.Wolf, Silicon Processing for the VLSI Era, vol. 1, Chapter 15: Wet Processing, pp. 515-517.

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