Carboxylic acid etching solution and method

Details Carboxylic acid etching solution and method Carboxylic acid etching solution and method

1997-06-30

1998-10-20

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216104, 216109, 216103, 252 793, 438714, 438911, 438733, B44C 122

Patent

active

058246010

ABSTRACT:
A sacrificial oxide etching solution of carboxylic acid and HF having a high etch selectivity for silicon oxide relative to polysilicon, metal, and nitride. The solution is useful in the fabrication of microstructures having integrated electronics on the same chip. A carboxylic acid anhydride can be added to this solution to substantially remove all free water so that the etch selectivity to metal is improved. One specific solution is formed by mixing acetic acid, acetic anhydride, and aqueous HF.

REFERENCES:
patent: 2970044 (1961-01-01), Ostapkouich
patent: 4395304 (1983-07-01), Kern
J. Micromech, Microegn.7 (1997) R1-R13. Printed in UK; Review Article, "Silicon Dioxide Sacrificial Layer etching in Surface Micromaching"; J. Buhler, F-P Steiner and H. Galtes; pp. R1-R13.

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