Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2009-11-04
2010-10-12
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S577000, C438S758000, C438S761000, C257SE21090, C257SE21270
Reexamination Certificate
active
07811906
ABSTRACT:
An in-place bonding method in which a metal template layer under a carbon layer is removed while the carbon layer is still attached to a substrate is described for forming a carbon-on-insulator substrate. In one embodiment of the in-place bonding method, at least one layered metal/carbon (M/C) region is formed on an insulating surface layer of an initial substrate structure. The at least one layered M/C region has edges that are bordered by exposed regions of the insulating surface layer. Some edges of the at least one layered M/C region are then secured to a base substrate of the initial structure via a securing structure, while other edges are left exposed. A selective metal etchant removes the metal layer under the carbon layer using the exposed edges for access. After metal etching, the now-unsupported carbon layer bonds to the underlying insulating surface layer by attraction.
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Bol Ageeth A.
Chu Jack O.
Grill Alfred
Murray Conal E.
Saenger Katherine L.
Ahmadi Mohsen
Garber Charles D
International Business Machines - Corporation
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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